| PART |
Description |
Maker |
| IGP01N120H2 IGB01N120H2 IGD01N120H2 IGB01N120H2E30 |
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT D2Pak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT DPak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT TO220
HighSpeed 2-Technology
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| IGB01N120H2 |
HighSpeed 2-Technology
|
Infineon Technologies A...
|
| Q67040-S4654 IGA03N120H2 Q67040-S4648 |
IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT FullPak
HighSpeed 2-Technology
|
INFINEON[Infineon Technologies AG]
|
| MMBD4448HSDW-TP MMBD4448HAQW-TP |
DIODE SWITCHING 80V 250MA SOT363 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE
200mW Switching Diodes
|
Micro Commercial Components, Corp.
|
| NSDEMN11XV6T1 NSDEMN11XV6T5 NSDEMN11DXV6T1/D |
Small Signal Switching Diodes in SOT563
Common Cathode Quad Array Switching Diode
Common Cathode Switching Diode 共阴极开关二极管
|
ONSEMI[ON Semiconductor]
|
| BAR81W |
PIN Diodes - RF switching diode for use in shunt configuration
Silicon RF Switching Diode
|
INFINEON[Infineon Technologies AG]
|
| BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BAS521LP-7B BAS521LP-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes
0.4 A, 325 V, SILICON, SIGNAL DIODE
HIGH VOLTAGE SWITCHING DIODE
|
Diodes Incorporated
|
| TSL253 TSL254 |
PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER
PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER
|
TAOS
List of Unclassifed Manufacturers
ETC
|
| BAY8012 BAY80-TAP |
Small Signal Switching Diode, High Voltage
DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
|
Vishay Siliconix
Vishay Semiconductors
|
